San Francisco, CA – June 3, 2025 — Tower Semiconductor has made a significant impact at this year’s International Microwave Symposium (IMS) by showcasing its latest advancement in radio frequency (RF) foundry technology. In collaboration with pSemi, the semiconductor leader introduced a next-generation RF switch that operates across an unprecedented frequency range, capturing the attention of industry leaders and earning a nomination for the prestigious Best Industry Paper Award.
The newly developed RF switch leverages cutting-edge phase-change material (PCM) integrated into Tower Semiconductor’s proprietary silicon-on-insulator (SOI) CMOS process. This innovative approach supports ultra-low insertion loss and high isolation, making it ideal for advanced wireless communication systems, including those designed for 5G and next-generation 6G networks.
A Leap in RF Design Innovation
The breakthrough was revealed through a jointly authored white paper titled “A Low-Loss, Wideband, 0–110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers.” This paper describes a single-pole, double-throw (SPDT) switch with a staggering operating bandwidth ranging from DC to 110 GHz. The breadth of this frequency range positions the switch as a versatile component for both current and future RF applications, including satellite communications, radar systems, and mobile networks.
This leap in performance was achieved by integrating PCM-based switches into Tower Semiconductor’s established RF SOI platform. PCM switches are known for their non-volatile operation, which allows them to retain their state without continuous power input. By combining this feature with a CMOS driver structure, the switch can be seamlessly embedded into compact systems without sacrificing performance.
Key Performance Highlights
This state-of-the-art RF switch boasts multiple performance enhancements that meet the increasingly demanding requirements of modern communication technologies:
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Ultra-Wide Frequency Range: DC to 110 GHz, far exceeding standard switch capabilities.
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Low Insertion Loss: Ensures minimal signal degradation and high transmission fidelity.
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High Isolation: Reduces interference between signal paths, essential for complex RF architectures.
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CMOS Compatibility: Facilitates integration into existing chip designs, allowing for scalable production.
These attributes make the RF switch particularly valuable for applications where size, power efficiency, and performance are critical — a trifecta of requirements in today’s mobile and satellite infrastructure.
Addressing Future Network Demands
The introduction of this next-generation RF switch comes at a pivotal time. With 5G deployment still expanding globally and the early stages of 6G research already underway, the telecom industry is preparing for a significant leap in data transmission speeds, network complexity, and device density. Higher frequency bands, including millimeter wave (mmWave) and even sub-terahertz ranges, are key to achieving the performance goals of these next-gen systems.
As networks move toward these advanced architectures, the need for highly integrated, broadband-capable RF components is becoming more urgent. Tower Semiconductor’s solution addresses this gap by offering a scalable, high-performance switch that can support both low- and high-frequency applications in a single package.
Collaboration Driving Innovation
The partnership between Tower Semiconductor and pSemi was instrumental in the development of this technology. Tower brought its expertise in RF SOI manufacturing and PCM integration, while pSemi contributed its design capabilities and RF systems knowledge. Together, the two companies have demonstrated what’s possible when foundry and design expertise are closely aligned.
“Our goal was to push the boundaries of what’s achievable in RF switch design,” said a Tower Semiconductor spokesperson at the event. “This collaboration exemplifies how innovative materials and proven CMOS integration can unlock performance once thought unattainable in a commercial setting.”
Industry Recognition and Next Steps
The RF switch technology’s nomination for Best Industry Paper at IMS 2025 highlights the industry’s growing recognition of this innovation. The technology is already drawing interest from OEMs and telecom equipment manufacturers seeking to future-proof their designs for upcoming 6G rollouts.
Moving forward, Tower Semiconductor plans to collaborate with additional partners to commercialize the technology and expand its applications into automotive radar, aerospace, and industrial IoT devices. Future iterations may also see the development of multi-throw variants and advanced packaging solutions that could further reduce footprint and improve thermal management.
Looking Ahead
As the demands of wireless technology continue to evolve, innovations like Tower Semiconductor’s wideband RF switch will be essential to keeping pace. Its combination of breadth, efficiency, and integration potential sets a new benchmark for RF design and could become a cornerstone of the next era in global communication.